Communication

Fast Photoelectric Conversion in the Near‐Infrared Enabled by Plasmon‐Induced Hot‐Electron Transfer

Yuanfang Yu

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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Yue Sun

School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China

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Zhenliang Hu

Center for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore, 117546 Singapore

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Xuhong An

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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Dongming Zhou

Centre for Chemistry of High‐Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027 China

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Hongzhi Zhou

Centre for Chemistry of High‐Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027 China

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Wenhui Wang

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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Kaiyang Liu

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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Jie Jiang

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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Dandan Yang

Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094 China

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Zainab Zafar

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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Haibo Zeng

Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094 China

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Fengqiu Wang

School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China

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Haiming Zhu

Centre for Chemistry of High‐Performance & Novel Materials, Department of Chemistry, Zhejiang University, Hangzhou, 310027 China

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Junpeng Lu

Corresponding Author

E-mail address: [email protected]

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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[email protected]

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Zhenhua Ni

Corresponding Author

E-mail address: [email protected]

School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189 China

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[email protected]

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First published: 08 September 2019

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Citations: 2

Abstract

Interfacial charge transfer is a fundamental and crucial process in photoelectric conversion. If charge transfer is not fast enough, carrier harvesting can compromise with competitive relaxation pathways, e.g., cooling, trapping, and recombination. Some of these processes can strongly affect the speed and efficiency of photoelectric conversion. In this work, it is elaborated that plasmon‐induced hot‐electron transfer (HET) from tungsten suboxide to graphene is a sufficiently fast process to prevent carrier cooling and trapping processes. A fast near‐infrared detector empowered by HET is demonstrated, and the response time is three orders of magnitude faster than that based on common band‐edge electron transfer. Moreover, HET can overcome the spectral limit of the bandgap of tungsten suboxide (≈2.8 eV) to extent the photoresponse to the communication band of 1550 nm (≈0.8 eV). These results indicate that plasmon‐induced HET is a new strategy for implementation of efficient and high‐speed photoelectric devices.

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